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Ͳ ELECTRICAL ENGINEERING 2010. . 61. .171-179 2010. Is. 61. P.171-179 621.315.592 Ҳ ²Ҳ ̲ ...

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1. .., .., .., .. // . 2009. . 51, . 1. . 48-51

2. .., .., .., . (, , ) . : 10.01/008.

3. .., .., .., ..

- // . 2005. . 47, . 7. . 1237. , . ij, .

4. Morgunov R. Spin micromechanics: elementary spin-dependent processes and their influence on plasticity of crystals // Physics-Uspekhi. 2004. 47. . 125.

5. .., .., .. // . 1989. 4. . 245 .., .. - CdS // . 2006. .

51. 3. . 275-278

7. .., .. . : , 2008. 687 .

   

Scientific Industrial Corporation Karat, 202 Stryiska St., 79031 Lviv, Ukraine In this work the mechanical stimulated electrophisical processes were investigated in p-Si crystals, which were effected by X-rays. It is shown, that in processes of uniaxial elastic deformation in p-Si crystals the curvature of existing dislocations happens. The Cottrell clouds, which change value of mechanical stimulated electroconductivity of samples, are localized on the nuclei of these dislocations. The nonmonotonic character of mechanical stimulated conductivity change is a confirmation of localization of charged defects and impurities in the Cottrell clouds.

Based on the experimental data it is shown, that low dose (D260 Gy) X-rays leads to increasing of the value of mechanical rigidity of investigated crystals. This effect is explained with processes of radiation-stimulated ordering of the defect structure of the crystal, and also the fact that interstitial atoms of Si, which are formed under the action of irradiation, are effective stoppers for dislocation movement.

Key words: p-Si crystals; mechanical stimulated electrophisical processes; the action of X-rays irradiation Ҳ ²Ҳ 179

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