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The dynamic of formation of chemical bond in defect semiconductors as a bases elements of nanostructure Gutsul I.V., Manyk O.N., Manyk T.O., Oliynich-Lysiuk A.V.

Yuriy Fedkovych National University, Chernivtsi, Ukraine The complex investigations of surface layers changes in Cz Si single crystals during natural ageing was made. By the method of theory of chemical bond was analyzed the inversions of shere modulus in Cz Si.

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1. Piotrowski J. and Rogalski A. Uncooled long wavelength infrared photon detectors // Infrared Physics Technology. 2004. 46. P. 115-131.

2. Piotrowski J. Uncooled operation of IR photodetectors // Optoelectronics Review. 2004. 12. P. 111-122.

3. Figielski T., Photostriction effect in germanium. // Phys. Status Solidi. 1961. 1. P 306-316.

Uncooled photovoltaic infrared detector Deryglazov V.O., Savkina R.K., Smirnov A.B., Sizov F.F.

V.Lashkaryov Institute of Semiconductor Physics at NA S of Ukraine, Kiev, Ukraine The operation of an uncooled, photovoltaic infrared detector is demonstrated. It based on the effect of the development of a local mechanical strain on the interface of a semiconductor structure (CdHg1-Te/Si) in consequence of the photogeneration of free charge carriers. The heating and subsequent pressure buildup has resulted in acoustic waves with conventional photoacoustic techniques.

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Pages:     | 1 |   ...   | 3 | 4 || 6 | 7 |   ...   | 68 |
 
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.: (050)697-98-00, (067)176-69-25, (063)846-28-10
׸


 
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