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Pages:     | 1 |   ...   | 2 | 3 || 5 | 6 |   ...   | 68 |

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XI ICPTTFN

max. max A*.

CdTe CuInSe2. , [3].

CdTe CdTe 450-560. , , CdTe, .

CuInSe2 In-Se CuInSe2 Cu, . CuInSe2 .

, CdTe CuInSe2 CdTe/CuInSe2, .

1. ., ., ., . . . . 1987. N. 513. 87.

2. ., ., ., . . . . 1987. N. 329. 87.

3. ., .., .., . . . . . . , 1995. N1.

Application of a closed box deposition technique for formation of semiconductor compound layers Boyko B., Kharchenko M.

National Technical University Kharkov Polytechnic Institute, Kharkov, Ukraine The technique for formation of CdTe and CuInSe2 polycrystalline layers by closed box deposition technique is described. The offered technique allows to obtain a high quality CdTe and CuInSe2 films at lower evaporator and substrate

   

temperatures as contrasted to other methods. The simple methodic which allows to determine a range of substrate temperature conforming to semiequilibrium at selected evaporator temperature is offered.

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Study of the acceptor impurity energy spectrum in the spherical nanoheterostructure centre of GaSb / AlSb crystals V.I. Boichuk, I.V. Bilynskyi, R.Ya. Leshko Ivan Franko Drohobych State Pedagogical University, Drohobych, Ukraine The acceptor admixture has been studied in the spherical GaSb / AlSb quantum dot center. The 4x4 spherical matrix Hamiltonian is obtained in the effective mass approximation, the system of coupled second-order differential

XI ICPTTFN

radial equations for even and odd states is derived.

The acceptor energy spectrum is determined by the variation technique for specific quantum numbers. The acceptor energy dependence is presented as a function of QD radius. Results of calculations are found in good agreement with the data of recent experimental and theoretical studies.

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1. Bolshakova, I. Duran, R. Holyaka, E. Hristoforou, A. Marusenkov.

Performance of Hall Sensor-Based Devices for Magnetic Field Diagnosis at Fusion Reactors // Sensor Letters. 2007. V. 5. P. 283-288.

XI ICPTTFN

2. Bolshakova I. Semiconductor sensor materials stable under conditions of hard ionizing radiation // Sensors and Actuators: A. Physical. 2003. V. 106 P. 344-347.

The technology of growing semiconductor whiskers on the basis of nanostructures Bolshakova I., Kost Ya., Makido O., Shurygin F.

Magnetic Sensor Laboratory, Lviv Polytechnic National University, Lviv, Ukraine The results of developing the technology for growing semiconductor whiskers from vapour phase are presented. One of the basic stages of this technology is nanowire generation using vapour-liquid-solid technique. Such nanowires are also of interest as scientific research objects, while the technology for their obtainment is realizable.

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, GROMACS, : - , .

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The influence of pressure on molecular structure of water systems with single wall carbon nanotubes Bulavin L.A., Adamenko I.I., Korolovych V.F., Moroz K.O.

Department of Physics Kyiv Taras Shevchenko Universit, Kyiv, Ukraine Water is very important in vital human activity. Nevertheless, small additions of some substances external fields: temperature and pressure can essentially influence the structure of water changing its properties. In this work we present the results of experimental investigation of PVT data and results of investigation of density by picnometer measurements along the liquids-vapour equilibrium curve of the water systems with single wall carbon nanotubes (SWCNT). PVT measurements were carried out by using the metallic bellows method with differential inductive sensor of linear shifts in the wide interval of pressures and temperatures. We obtained the isothermal modulus of elasticity, isobaric expansion, isothermal deviation of entropy, enthalpy, total internal energy and isobaric-isothermal Gibbs potential. These properties of the investigated water systems were analyzed depending on pressure and temperature in comparis on with corresponding properties of pure water. The equation of state for the investigated CNT - water system was obtained. Its parameters were analyzed in detail depending on temperature.

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Si GaAs , , p-n- . () .

0,56 3 . , , . , , 10-5, .

: , , , .. . Si GaAs SiO2-Si s2O3-GaAs -. , , 10-300 Si GaAs.

XI ICPTTFN



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.: (050)697-98-00, (067)176-69-25, (063)846-28-10
׸


 
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